Mirror-assisted interdigitated back-contact CMOS photovoltaic devices for powering subcutaneous implantable devices

摘要

Enhanced photocurrent generation in CMOS back-contact photovoltaic devices is experimentally demonstrated in this work by utilizing multilevel metals in standard bulk CMOS to simultaneously achieve uniform series resistance of devices and high optical reflection from back metal mirrors, thus boosting the device efficiency to 18.05 and 20.33% for fingerand leaf-type junction designs, respectively, under 980-nm illumination.