Design analysis of InN/InGaN quantum well laser with GaN layers at 1320??1350 nm wavelength

摘要

In this work, a nitride based strained single quantum well laser has been designed and characterized at 1330 nm wavelength. Here, InN has been used as well material and InGaN has been used as barrier material along with GaN as separate confinement heterostructure for better carrier and optical confinement. For the analysis of characteristics of the laser system, 6-bands k.p formalism for wurtzite semiconductor has been solved considering band mixing effect, strain due to lattice mismatch, spontaneous and piezoelectric polarization and carrier screening effects. The optical gain and spontaneous emission rate and also the interband momentum matrix elements have been calculated to analyze the optical properties of the designed laser and a good agreement with previously published works is obtained.