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Narrow line crystallization of rubrene thin film enhanced by Yb interfacial layer for single crystal OFET application

机译:用yb界面缩小氧化橡胶薄膜的窄线结晶,用于单晶的互晶层

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Rubrene is one of the most promising organic semiconductor for OFET application. The high hole mobility such 1.21 cm/(Vs) has been reported for the OFET with rubrene thin film evaporated on SiO gate insulator for bottom-g; geometry [1]. However, the crystallization of rubrene thin film on SiO is difficult to be controlled. A self-assembled monolayer (SAM) scheme is often used to realize the good crystallinigy of organic semiconductor films. However, it 1 an issue in terms of the uniformity which would be an issue of large scale integration of OFETs. In this paper, we ha investigated the narrow line crystallization of rubrene thin film utilizing Yb interfacial layer, which is able to be in-s deposited in a same chamber for rubrene deposition, for the first time.
机译:rubRene是FORET应用中最有希望的有机半导体之一。已经向SiO栅极绝缘体上蒸发的橡胶薄膜的OFET以底部G蒸发,据报道了诸如橡胶薄膜的高空穴迁移率。几何[1]。然而,难以控制SiO上杂液薄膜的结晶。自组装单层(SAM)方案通常用于实现有机半导体膜的良好晶体。然而,它在均匀性方面是一个问题,这将是大规模集成OFETS的问题。在本文中,我们研究了利用Yb界面层的杂液薄膜的窄线结晶,这是首次在同一腔室中沉积在相同的腔室中。

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