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LSI packaging development for high-end CPU built into supercomputer

机译:LSI包装开发,高端CPU内置于超级计算机

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This paper reports on the development of CPU package for the next-generation supercomputer, besides a report of the assembly technology development of a large-scale BGA package that mounts large-scale chip. A large-scale LSI is mounted on CPU package developed this time. The size of a large-scale LSI is about 23.0×23.0mm. In addition, low permittivity (Low-k) material is adopted in interlayer dielectric in wiring layer. Because this Low-k material was fragile, being destroyed by stress that hangs in assembly became a problem. To clear this problem, the kind of the substrate was examined from the coefficient of thermal expansion. Moreover, the confirmation including an enough margin is done. The criterion was decided and the evaluation was executed. As a result, the Low-k layer was able to be prevented being destroyed. Next, it thought the control of void generated when under­fill was filled to be a critical. It is difficult because the chip size is large and there are a lot of numbers of solder bump. Best under-fill is selected an it was applied to this package. Finally, to accommodate to the demand value to severe thermal resistance, Cu-LID was selected as a high heat radiation structure. Additionally, the thermal interface material was adopted between the chip and Cu-LID. The amount of the warpage on the surface of Cu-LID was controlled to about 50 microns by this structure. Moreover, void of the metal joint was not generated, and either the wettability was satisfied. It passes the preprocessing and subsequent environmental test on JEDEC Level-4, and it thinks the package developed this time to be high-quality.
机译:本文报告了下一代超级计算机的CPU包的开发,除了安装大型芯片的大型BGA包的大型BGA包装的报告。大型LSI安装在此时开发的CPU包上。大规模LSI的大小约为23.0× 23.0mm。另外,在布线层中的层间电介质中采用低介电常数(低k)材料。因为这种低k材料是脆弱的,因为被组装悬挂的压力被摧毁成为一个问题。为了清除该问题,从热膨胀系数检查基板的种类。此外,已经完成了包括足够余量的确认。决定标准并执行评估。结果,能够防止低k层被破坏。接下来,它认为在&#X00AD下填补时生成的空隙;填充是一个关键的。很困难,因为芯片尺寸很大,并且有很多焊料凸块。选择最佳填充填充物已应用于此包装。最后,为了容纳对严重的热阻的需求值,选择Cu-Lid作为高热辐射结构。另外,芯片和Cu-盖之间采用了热界面材料。 Cu-LID表面上的翘曲量通过该结构控制至约50微米。此外,未产生金属接头的空隙,并且满足润湿性。它通过JEDEC-4的预处理和随后的环境试验,并认为这次将该包装开发出高质量。

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