A Novel Fan-Out Concept for Ultra-High Chip-to-Chip Interconnect Density with 20-μm Pitch

摘要

The rapid growth of data bandwidth required between logic and memory chips for next generation device nodes is progressively pushing low I/O count serial busses to their limits. To further satisfy this increasing need for high data rates, wider I/O count busses are now being developed and established. Over the past years, various Fan-Out Wafer-Level-Packaging (FOWLP) approaches have been developed to answer the needs mentioned above and the increasingly demanding function integration on package. Imec has been working on a novel 300mm Fan-Out Wafer-Level-Packaging concept that enables 20μm pitch interconnect density. Results from experiments demonstrates wafer bow below 500μm after molding on silicon substrate with ultra-low die shift with maximum die to carrier mismatch below 10μm on full 300mm wafers. Further warpage and die shift evolution are expected depending on the process steps the wafers must go through and will be further discussed.