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Wafer IMS (Injection molded solder) amp;#x2014; A new fine pitch solder bumping technology on wafers with solder alloy composition flexibility

机译:晶圆IMS(注塑焊料)—具有焊料合金成分的晶圆上的新型细小螺旋焊料凸块技术柔性

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In this paper, we will describe a new low cost solder bumping technology for use on wafers. The wafer IMS (injection molded solder) process can form fine pitch solder bumps on wafers, while offering greater solder alloy flexibility. This method is also applicable to form uniform solder bump heights when a wafer has different size and shape of I/O pads. The wafer IMS bumping process uses a solder injection head that melts the desired bulk solder alloy composition and then dispenses the molten solder into resist material cavities on wafers within a nitrogen environment. The injected molten solder contacts and wets to the metal pads without flux, thus forming intermetallic compounds at the solder/pad interface. After stripping the resist material, solder bumps exhibit straight side walls and round tops as the solders have solidified inside the cavities of this resist film. This particular geometry is unique and offers a ready-for-substrate bonding condition without an additional reflow step. In the case of using Cu pillars, one resist material is used for both Cu electroplating and molten solder injection. After patterning the resist material, the Cu pillars are electroplated to the desired height, and the remaining cavities of resist material are filled by the injection of molten solder. The final bump height is defined by the thickness of the resist material. Therefore, any non-uniformity of Cu pillar height across a wafer is masked by the final solder bump uniformity. A prototype tool for wafer IMS bumping technology has been developed and solder bumping has successfully been demonstrated with Sn-3.0Ag-0.5Cu solder on 200mm wafers. The test wafer employed interconnects pads of four different diameters and three different shapes. Other solder compositions have also been tried successfully.
机译:在本文中,我们将描述一种用于晶圆的新型低成本焊料凸块技术。晶片IMS(注塑成型焊料)工艺可以在晶片上形成细距焊料凸块,同时提供更大的焊料合金柔性。当晶片具有不同的I / O焊盘形状时,该方法也适用于形成均匀的焊料凸块高度。晶片IMS凸块工艺使用熔化所需的散装焊剂合金组合物的焊料注入头,然后将熔融焊料分配到氮环境内的晶片上的抗蚀剂材料腔内。将喷射的熔融焊料触点和湿润到金属焊盘而没有通量,从而在焊料/焊盘接口处形成金属间化合物。剥离抗蚀剂材料后,焊料凸块表现出直线壁和圆顶,因为焊料在该抗蚀剂膜的空腔内凝固。这种特殊的几何形状是独特的,提供了一种现成的基板键合条件,没有额外的回流步骤。在使用Cu柱的情况下,一种抗蚀剂材料用于Cu电镀和熔融焊料喷射。在图案化抗蚀剂材料之后,Cu柱被电镀到所需的高度,并且通过注射熔融焊料填充抗蚀剂材料的剩余空腔。最终凸块高度由抗蚀剂材料的厚度限定。因此,通过最终焊料凸块均匀性掩盖晶片上的Cu柱高度的任何不均匀性。开发了一种用于晶圆IMS凸块技术的原型工具,并成功地将焊料撞击成功地用SN-3.0AG-0.5CU焊料进行了演示,200mm晶片。测试晶片采用四个不同直径的互连垫和三种不同的形状。其他焊料组合物也已成功尝试。

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