Impact of on-Silicon De-Embedding Test Structures and RF Probes Design in the Sub-THz Range

摘要

In this paper, we present on-wafer TRL calibration results up to 220 GHz using on-wafer fabricated test structures on the silicon substrate. For on-wafer TRL calibration, “Open-M1”, which is an important test structure used for transistor's de-embedding, is considered as a DUT and thorough analysis is presented about its terminal capacitances. The measurement results are comprehensively examined through 3D EM simulation and possible solutions to improve on-wafer TRL calibrated measurement results are also proposed.