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High Power THz Oscillators with Offset-fed Slot Antenna and High Current Density Resonant Tunneling Diodes

机译:高功率THz振荡器,具有偏移送入槽天线和高电流密度谐振隧道二极管

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We report experimental and theoretical results on the increase in output power of resonant tunneling diode (RTD) oscillators in sub-terahertz (THz) range with an offset-fed slot antenna and high current density. Theoretical analysis shows that the oscillation frequency increases with an offset from the center of the slot antenna. Output power also increases with the offset up to the point of the best impedance matching. As the result of calculation, the oscillation at 600GHz with the output power of 610μW is expected for a single RTD with high peak current density (18mA/μm{sup}2) and an offset structure. In a preliminary experiment, an output power of 150μW was obtained at 271GHz with peak current density of 7mA/μm{sup}2.
机译:我们报告了在子太平衡(THz)范围内的谐振隧道二极管(RTD)振荡器的输出功率提高的实验和理论结果,具有偏移供给槽天线和高电流密度。理论分析表明,振荡频率随着槽天线的中心的偏移而增加。输出功率也随着最佳阻抗匹配的偏移量而增加。作为计算结果,预期具有610μW的输出功率的600GHz的振荡,对于具有高峰值电流密度的单个RTD(18mA /μm{sup} 2)和偏移结构。在初步实验中,在271GHz中获得150μW的输出功率,峰值电流密度为7mA /μm{sup} 2。

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