2Se Determination of the Terahertz Dielectric Function of the Topological Insulator Bi2Se3
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Determination of the Terahertz Dielectric Function of the Topological Insulator Bi2Se3

机译:拓扑绝缘体Bi2se3的太赫兹介质函数的测定

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We investigate the THz conductivity of the topological insulator Bi2Se3, in a systematic study involving samples of different thicknesses. In our analysis we compare the fits of experimental data to two suggested models, describing the electron and phonon contributions: Drude with Fano-modified Lorentzian resonance, and Drude with a two-Lorentzian resonance. Analysis of the fit accuracy suggests that the asymmetric shape of the lattice resonance in Bi2Se3 might arise from the presence of a surface vibrational state, rather than from the electron-phonon Fano interference, as was previously suggested.
机译:我们调查拓扑绝缘体BI的THz电导率 2 SE. 3 ,在涉及不同厚度的样品的系统研究中。在我们的分析中,我们将实验数据的适合与两个建议的模型进行比较,描述了电子和声子贡献:博德与扇形改性的洛伦兹共振,以及具有双洛位出的共鸣的博德。拟合精度的分析表明,BI的晶格共振的不对称形状 2 SE. 3 如前所述,可能从表面振动状态的存在而不是来自电子 - 声子扇形干扰。

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