ZnO thin films formed from ZnN target by RF sputtering: From materials to devices

摘要

In this work a single ZnN sputtering target was used to fabricate n-and p-type transparent films, namely: (a) n-ZnN thin films in pure Ar plasma and (b) p-ZnO:N films in Ar-O2 plasma. The structural, optical and electrical properties of the films were investigated. Zinc nitride films deposited in pure Ar were n-type, with low resistivity. Films deposited in more than 40% O2 in plasma were p-type ZnO films. A thin film transistor having zinc nitride as channel layer as well as n-ZnN/p-ZnO and p/n ZnO diodes in a single deposition run were fabricated and characterized.