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Basing Acceptable Error-tolerant Performance on Significance-based Error-rate (SBER)

机译:基于显着性的差值(Syber)基于可接受的耐腐蚀性能

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As CMOS scaling continues to decrease and new technologies emerge, feature sizes approach molecular sizes. Due to high defect rates, process variations and quantum effects, manufacturing yields have decreased. To increase the effective yield, error-tolerance, which allows for some defective chips to be employed in systems that can tolerate errors, has been proposed. To support error-tolerance, the acceptability of defective chips must be quantified according to certain measures. A new measure is proposed in this paper, namely significance-based error-rate (SBER). SBER combines two previously studied error-tolerance measures, namely error-significance and error-rate. In this paper we introduce three different ways to quantify the SBER value(s) of a defective chip using built-in self-test (BIST). These techniques cover the following scenarios: (1) multiple copies of a target circuit where at least one copy is non-defective; (2) multiple copies of a target circuit where none are defect free; and (3) single copy of a defective target circuit. For each scenario, the statistical characteristics of the estimation of the SBER value are discussed.
机译:随着CMOS缩放继续减少和新技术出现,特征尺寸接近分子尺寸。由于高缺陷率,工艺变化和量子效应,制造产率降低。为了提高有效的产量,已经提出了允许在能够容忍误差的系统中使用一些有缺陷的芯片的耐堵塞。为了支持耐堵塞,必须根据某些措施量化缺陷芯片的可接受性。本文提出了一种新的措施,即基于意义的基于差价(Syber)。 SBER结合了两个先前研究的差错措施,即误差显着性和误差率。在本文中,我们使用内置自检(BIST)介绍了三种不同的方法来量化有缺陷芯片的SYB值。这些技术涵盖以下情景:(1)目标电路的多个副本,其中至少一个副本是不缺陷的; (2)目标电路的多个副本,其中没有缺陷; (3)缺陷目标电路的单拷贝。对于每种情况,讨论了Syb值估计的统计特征。

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