High speed turn-on gate driving for 4.5kV IEGT without increase in PiN diode recovery current

摘要

4.5 kV IEGT turn-on loss reduction is experimentally and numerically achieved by employing the proposed simple two step gate drive method without affecting PiN diode reverse recovery performance. It was found that 14% of turn-on loss is reduced only by the simple method. This study determines, for the first time, the optimum gate driving in the two step gate drive which can reduce IEGT turn-on loss maximally without affecting PiN diode reverse recovery performance by TCAD simulation. The method is simple yet effective for reducing switching loss of high voltage IEGT.