60V-class power IC technology for an intelligent power switch with an integrated trench MOSFET

摘要

New 60V-class intelligent power switch (IPS) technology implementing a vertical trench MOSFET has been developed for automotive applications. We have realized the method to integrate a 60V-class vertical trench MOSFET with high voltage surge robustness and 5V- and 60V-class lateral planar MOSFETs on one chip. The integrated vertical trench MOSFET is designed by 0.35μm-rule in order to reduce its specific on-resistance (Ron·A). As a result, our integrated vertical trench MOSFET has the Ron·A below 0.6mΩ·cm2 which is about 40% Ron·A of the vertical planar MOSFET integrated in the conventional IPS. This paper reports our newly developed 60V-class power IC technology for the IPS.