Recent studies have shown that tungsten oxide nanomaterials such as nanowires and nanorods have very good field electron emission property [1–7]. In an early work, we have reported findings on very low field electron emission from tungsten oxide nanotip arrays grown by a two-step physical evaporation deposition process [1]. In this study, we demonstrate that large-area W18O49 pencil-like nanostructure arrays can be grown on silicon substrate by multi-step thermal evaporation process. Figure 1 shows a side view scanning electron micrograph of a typical W18O49 pencil-like nanostructure arrays (a) and the enlarged SEM image (b) of a nanotip, as well as their typical SAEDS spectrum (c) and typical XRD spectrum (d). The spacing of nanotip-to-nanotip between neighboring pencil-like nanostructures may be increased by adjusting growth temperature.
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机译:最近的研究表明,氧化钨纳米材料如纳米线和纳米峰具有非常好的现场电子发射特性[1-7]。在早期的工作中,我们已经报道了通过两步物理蒸发沉积过程所生长的氧化钨纳米玻璃阵列非常低的现场电子发射的结果[1]。在这项研究中,我们证明了通过多步热蒸发过程可以在硅衬底上生长大面积W 18- INF> O 49 IM>铅笔状纳米结构阵列。图1显示了典型的W 18 INF> O 49 INF>铅笔状纳米结构阵列(A)的侧视图扫描电子显微照片和纳米坡的放大SEM图像(B),以及典型的Saeds Spectrum(C)和典型的XRD光谱(D)。可以通过调节生长温度来增加相邻的铅笔样纳米结构之间的纳米坡到纳米纤维的间隔。
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