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Atomically Sharp Field Emitters and Oxygen Caused Thermal Faceting of W111 Tip

机译:原子上锋利的场发射器和氧导致W 111尖端的热调

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Ultrasharp field emitters produced on the basis of the W [111] tip have been investigated in the last decade for their unique properties as sources of highly collimated and coherent electron beams, emission stability and easy emitter regeneration. Several methods of sharp microtip preparation had been developed, including those based on prolonged annealing of the tip in oxygen atmosphere (with O{sup}2 pressure in the range 10{sup}(-4)-10{sup}(-5) Torr) [1-3], where mechanisms of oxygen induced massive corrosion of tungsten and desorption of tungsten oxides were utilised to reduce the tip radius of curvature. But it is the phenomenon of faceting which causes the very apex of the W[111] emitter to attain its desirable shape. It is known that adsorption of oxygen on tungsten causes high surface energy anisotropy, what leads to faceting. Oxygen induced faceting of W[111] plane has been reported to start at temperatures as low as 800 K [4] and could be observed after annealing at temperatures as high as 1800 K [5]. This phenomenon was observed both on planar crystals and on curved surfaces of field emitter tips, for low O{sub}2 exposures (0.5 L, 1020 K [6]; 0.6 L, 1200 K [7]) as well as for high exposures (up to 60 L [8], 1000 L [6]). Unfortunately, there is few data concerning oxygen promoted faceting of W[111] for intermediate O{sup}2 exposures 0.5-several L.
机译:的W [111]端头的基础上产生的Ultrasharp场发射器已经在过去十年中已研究了其独特的特性,如源高度准直的和一致的电子束,发射的稳定性和容易发射器再生。锋利微尖端制备的几种方法已经被开发出来,包括基于在氧气气氛(尖端的延长退火带O {SUP}范围为10 {SUP} 2压力那些( - 4)-10 {SUP}( - 5)托)[1-3],其中氧的机制诱导钨和氧化钨的解吸大量腐蚀被用来减小曲率尖端半径。但它是刻面的这使得W [111]发射器的非常顶点实现其期望的形状的现象。已知的是,氧对钨的吸附导致高的表面能的各向异性,是什么导致刻面。氧诱导的刻面W的[111]平面已经报道在温度低至800 K [4]开始并在温度高达退火为1800 K [5]之后,可以观察到。观察到两个在平面晶体和上发射头字段的曲面,对于低-O {子} 2个暴露这一现象(0.5L,1020 K [6]; 0.6 L,1200 K [7]),以及用于高曝光(至多60 L [8],1000 L [6])。不幸的是,很少有数据有关氧促进W [111]为中间体O {SUP} 2次曝光0.5几个L的刻面

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