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Search for Electronic Cooling from Carbon-Based Field Emitters

机译:搜索碳基磁场发射器的电子冷却

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In a 1999 paper, Likharev and Korotkov proposed a model of resonance Fowler-Nordheim (rFN) tunneling that can result in electronic cooling [1]. The emitter consists of a thin (nm) dielectric layer on top of a conductive material. The corresponding I-V curve of such an emitter is a superposition of two I-V curves. At low fields, rF-N dominates and at high fields F-N dominates. At resonance, a leveling off or even a maximum in the I-V curve develops. For appropriate material parameters, cooling of the emitter can result. For a diverse number of carbon-based emitters, we have observed such shapes in the I-V curves. These include carbon black, nanocrystalline graphite, carbon nanotubes and others. To observe possible cooling, an experiment was designed consisting of gluing a small silicon chip (1cm×1cm) onto a thermistor. The chip contains a 1 mm diameter emitter film near its center that is a composite of nanocrystalline graphite and carbon nanotubes (Figures 1 and 2). A second thermistor is placed close by and serves as a temperature reference. With this system, it is possible to observe changes in temperature as small as 0.01 K.
机译:在1999年的纸质中,Likharev和Korotkov提出了一种共振福勒-NONDHEIM(RFN)隧道模型,可以导致电子冷却[1]。发射器由导电材料顶部的薄(nm)介电层组成。这种发射器的相应I-V曲线是两个I-V曲线的叠加。在低场,RF-N主导和高领域F-N主导。在谐振下,I-V曲线中的静音甚至最大值。对于适当的材料参数,可以产生发射器的冷却。对于多数数量的碳基发射器,我们已经观察到I-V曲线中的这种形状。这些包括炭黑,纳米晶石墨,碳纳米管等。为了观察可能的冷却,设计了一种实验,包括将小硅芯片(1cm×1cm)粘合到热敏电阻上。该芯片在其中心附近含有1mm直径的发射器膜,其是纳米晶石墨和碳纳米管的复合物(图1和2)。第二热敏电阻被靠近并用作温度参考。利用该系统,可以观察温度的变化,小于0.01 K.

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