Study on the Internal Damage of Semiconductor Devices and External Damage of Insulator Layers

摘要

The semiconductor Silicon is the important material applied to manufacture the integrated circuits (IC), vacuum nano-electronic devices (VND), micro electronic mechanical systems (MEMS), and nano electronic mechanical systems (NEMS) etc. semiconductor devices. It is known that the SiO{sub}2 insulator layer is manufactured on the surface of the semiconductor silicon material used to manufacture the semiconductor devices, and there is the SiO{sub}2 insulator layer manufactured on the surface of the semiconductors devices, and also there are the multiple SiO{sub}2 insulator layers between the semiconductor layer and the metal layer, between two metal layers in the IC. The sizes of the IC, VND, MEMS, and NEMS etc. semiconductor devices are so small that the scanning electron microscopy (SEM) is often applied to detect the defects and microstructures of the semiconductor devices. In particular, it is significant that the SEM can permeate the SiO{sub}2 insulator layer to visualize the defects and microstructures of the semiconductor materials or semiconductor devices, which can be very helpful for researching the semiconductor materials or semiconductor devices, which can also be applied to manufacture the semiconductor materials or semiconductor devices, because with which we can filtrate the semiconductor materials or semiconductor devices to improve qualified product ratio, finished product ratio and reliability of the semiconductor materials or semiconductor devices.