Fabrication of Local Micro Vacuum Package Incorporating Si Field Emitter Array and Ti Getter

摘要

Field emitter has high speed response characteristics at over 100 GHz because they utilize the electron emission in a vacuum. Therefore, field emission device are very suitable for use as high speed switching elements, and practical field emitters can be fabricated by using Si process. Consequently we have fabricated a local vacuum package on a Si substrate that is adapted to IC process for on-chip integrated devices. This has the great advantage that devices can be aligned on a micro mater size, and is very useful for many applications involving high performance on-chip integrated devices.