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Numerical Modeling of Electron-Optical Characteristics of Thermal Field Electron Sources

机译:热场电子源电子光学特性的数值模型

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It is well known that ZrO/W<100> Schottky cathodes are widely used in various electron probe analytical instruments and units. The normalized brightness (β{sub}p) of electron probes formed by electron-optical systems (EOS) of those instruments may reach very high values (up to ~10{sup}8 A/(m{sup}2 sr V) [1]). However the above traditional applications do not exhaust the potentials of thermal field emission phenomenon. Specifically, of considerable interest are the prospects for creating super high brightness electron beams. Forming electron beams with β{sub}p 10{sup}8 A/(m{sup}2 sr V) would make feasible development of a new class of electron probe instruments which will help to solve a number of current scientific and technological problems including those of micromechanics and microelectromechanics. Since β{sub}p ∞ β{sub}s, where β{sub}s is the brightness of the electron source (cathode) of EOS, the purpose of the present work was to study physical and technological aspects the development super high brightness thermal field electron sources.
机译:它公知的是的ZrO / W <100>肖特基阴极广泛应用于各种电子探针分析仪器和单位。通过这些文书的电子光学系统(EOS)形成的电子探针的归一化亮度(β{子} P)可以达到非常高的值(达〜10 {SUP} 8 A /(米{SUP} 2 SR V) [1])。然而上述传统的应用并没有穷尽的热场发射现象的电位。具体地讲,相当大的兴趣是创造超高亮度电子束的前景。形成与电子束β{子} P 10 {SUP} 8 A /(米{SUP} 2 SR V)将使一类新的电子探针仪器的,这将有助于解决了一些目前的科学的切实可行的发展和技术问题,包括那些细观和microelectromechanics的。由于β{子} p∞β{子} S,其中β{子} s是EOS的电子源(阴极)的亮度,在本工作的目的是为了研究物理和技术方面的发展超高亮度热场的电子源。

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