USE OF AMORPHOUS HYDROGENATED SILICON CARBIDE AS A REAR-SIDE PASSIVATION LAYER FOR CRYSTALLINE SILICON SOLAR CELLS

摘要

a-SiCx:H is a material which could be used as a passivating layer for a crystalline silicon solar cell witha minimum surface recombination vel°City of 7.5 cm.s-1. The thermal stability should also be considered. As the Sirichesta-SiCx:H films are the less stable one, carbon-richer stoichiometry are preferred. From C(V) measurements,the interface between a-SiCx:H and c-Si seems to be in accumulation regime. In presence of l°Cal aluminiumcontacts, it means that a BSF on the whole rear side is established making the use of a-SiCx:H interesting for the rearsidepassivation. For the PERC solar cells, two stoichiometries [C] = 0.15 and [C] = 0.24 are chosen because they aremore thermally stable than Si-richest films and they ensure good surface passivation. An additional layer of SiNx:H atthe rear side improves the internal reflection. We compare also results obtained with solar cells schemes with andwithout thin layer of oxide at the front-side.