3D SIMULATIONS OF BACK-CONTACT BACK-JUNCTION C-SI(P) SOLAR CELLS WITH DOPED POINT CONTACTS

摘要

The back-contact back-junction BC-BJ solar cell concept is a promising photovoltaic structure for bothlaboratory and industrial c-Si solar cells. High efficiency devices based on this concept have been reported in the pastusing either diffused regions or applying the heterojunction with intrinsic thin layer HIT concept to perform both baseand emitter contacts. In this work we use 3D numerical simulations to study the impact of technological parameters ondevice performance of c-Si(p) BC-BJ solar cells with point-like doped contacts. Numerical simulations allow us tooptimize rear contact geometry as a trade-off between recombination and base resistive losses, leading to photovoltaicefficiencies higher than 18.3% and up to 22.3% on 2.2 cm FZ substrates depending on the back contact pattern and thepassivation quality of base contacts.