PV MODULE DEGRADATION UNDER HIGH POTENTIALS – A COMPARATIVE STUDY BETWEEN TEST SETUPS

摘要

In the past years PID of c-Si modules attracted a lot of attention – as claims out of the field, work inresearch institutes, laboratories and the IEC community. During that period a lot of different test setups weredeveloped to check c-Si modules against their susceptibility for PID. Herein the most common techniques aresummarized and a procedure to compare them is given. The comparison is a guide to analyze test result differencesand may help to understand why in some PID tests modules fail and in another the same module type passes.The comparison is a straight forward multiplication of adjustable test parameters like test temperature, time andapplied potential. A difficulty is the implementation of the different front side contacting methods and this will bediscussed in detail, since outdoor data show that rain, humidity and dry air have a huge impact on leakage currentsand therefore for the progression of PID.