Due to its small band-gap and its high mobility, InN is a promising material for a large number of key applications like band-gap engineering for high efficiency solar cells, light emitting diodes, and high speed devices. Unfortunately, it has been reported that this material exhibits strong surface charge accumulation which may depend on the type of surface. Current investigations are conducted in order to explain the mechanisms which govern such a behavior and to look for ways of avoiding it and/or finding applications that may use such an effect. In this framework, low frequency noise measurements have been performed at different temperatures on patterned MBE grown InN layers. The evolution of the 1/f noise level with temperature in the 77 K-300 K range is consistent with carrier number fluctuations thus indicating surface mechanisms: the surface charge accumulation is confirmed by the noise measurements.
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