Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers

摘要

Bulk conduction in molecular beam epitaxial InN layers has been confirmed using low frequency noise measurements versus temperature. A generation-recombination process has been identified at low temperatures <100 K and attributed to a trap with a discrete energy level in the band gap. The energy position of this trap has been determined to be around 52 meV below the conduction band minimum.