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A Low-Power Hybrid Reconfigurable Architecture For Resistive Random-Access Memories

机译:用于电阻随机接入存储器的低功耗混合可重构架构

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Access-transistor-free memristive crossbars have shown to be excellent candidates for next generation non-volatile memories. While the elimination of the transistor per memory element enables higher memory densities, it also introduces parasitic currents during the normal operation of the memory that increases both the overall power consumption of the crossbar, and the current requirements of the line drivers. In this work we present a hybrid reconfigurable memory architecture that takes advantage of the fact that a complementary resistive switch (CRS) can behave both as a memristor and as a CRS. By dynamically keeping frequently accessed regions of the memory in the memristive mode and others in the CRS mode, our hybrid memory offer all the benefits that a memristor and a CRS offer individually, without any of their drawbacks. We validate our architecture using the SPEC CPU2006 benchmark and found that our hybrid memory offers average energy savings of 3.6x with respect to a memristive-only memory. In addition, we can offer a memory lifetime that is, on average, 6.4x longer than that of a CRS-only memory.
机译:访问晶体管内忆横磁带已显示为下一代非易失性存储器的优异候选者。虽然每个内存元件的消除晶体管使得能够更高的存储器密度,但在存储器的正常操作期间也引入寄生电流,这增加了横杆的总功耗,以及线路驱动器的当前要求。在这项工作中,我们提出了一种混合可重构的内存架构,该架构利用互补电阻开关(CRS)可以作为忆阻器和CRS表现。通过在CRS模式动态地保持记忆的频繁访问的地区,在忆阻模式和其他人,我们的混合内存提供的所有好处,一个忆阻器和CRS单独提供的,没有任何自己的缺点。我们使用规范CPU2006基准验证我们的架构,并发现我们的混合内存能够提供3.6倍的平均节能相对于唯一的存储器。此外,我们可以提供比CRS的内存更长的内存寿命,平均为6.4倍。

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