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FREE-p: Protecting non-volatile memory against both hard and soft errors

机译:Free-P:保护非易失性存储器抵抗硬质且软误差

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Emerging non-volatile memories such as phase-change RAM (PCRAM) offer significant advantages but suffer from write endurance problems. However, prior solutions are oblivious to soft errors (recently raised as a potential issue even for PCRAM) and are incompatible with high-level fault tolerance techniques such as chipkill. To additionally address such failures requires unnecessarily high costs for techniques that focus singularly on wear-out tolerance. In this paper, we propose fine-grained remapping with ECC and embedded pointers (FREE-p). FREE-p remaps fine-grained worn-out NVRAM blocks without requiring large dedicated storage. We discuss how FREE-p protects against both hard and soft errors and can be extended to chipkill. Further, FREE-p can be implemented purely in the memory controller, avoiding custom NVRAM devices. In addition to these benefits, FREE-p increases NVRAM lifetime by up to 26% over the state-of-the-art even with severe process variation while performance degradation is less than 2% for the initial 7 years.
机译:新兴的非易失性存储器如相变RAM(PCRAM)提供了显着的优势,但遭受了写入耐久性问题。然而,先前的解决方案对软误差感知(最近升级为潜在的问题,即使是PCRAM也是不相容的,并且与芯片基舱等高级容错技术不相容。另外,此类故障需要不必要的高成本,以满足侵略耐受性的奇异。在本文中,我们用ECC和嵌入指针(Free-P)提出细粒度重新映射。 Free-P倒好细粒度的磨损NVRAM块,无需大型专用存储。我们讨论Free-P如何保护硬质且柔软的错误,并且可以扩展到Chipkill。此外,Free-P纯粹可以在存储器控制器中实现,避免自定义NVRAM设备。除了这些益处外,即使在最初的过程变化,初始7年的性能降解较严重的过程变化,Free-P也会通过最先进的寿命增加高达26%。

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