A consistent dynamic MOSFET model for low-voltage applications

摘要

The development towards lower voltages and even ultra-low-power (ULP) technologies makes ever higher demands on compact device model accuracy. We present a new approach to dynamic MOSFET modeling, which is especially suited for the simulation of low-voltage mixed analog digital circuits. The model is based on terminal charges and conductive currents which are determined from transient current/voltage data which can be easily obtained through measurement or simulation of the devices.