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Design and implementation of a novel poly-Si single proof-mass differential capacitive-sensing 3-axis accelerometer

机译:新型多晶硅单质量差动电容传感三轴加速度计的设计与实现

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This study presents a novel single proof-mass 3-axis capacitive-type accelerometer design consisting of poly-Si rib-proofmass, springs, high-aspect-ratio in-plane sensing electrodes, and plate-type out-of-plane sensing electrodes. This single proof-mass accelerometer design has three merits to increase the sensitivity, (1) large area plate-type out-of-plane gap-closing sensing electrodes with differential capacitive-sensing capability; (2) large area high-aspect-ratio in-plane gap-closing sensing electrodes; (3) electrical routings for 3-axis sensing are considered, and (4) thick ribs to remarkably increase the proof-mass. The single proof-mass 3-axis accelerometer is implemented using well-known two poly-Si and trench refill processes. Measurements (0.1G∼3G) show that sensitivities (non-linearity) of etch direction are X-axis:4.31mV/G (2.72%), Y-axis:4.30mV/G (2.57%), and Z-axis:3.48mV/G (2.91%).
机译:这项研究提出了一种新颖的单质量质量三轴电容式加速度计设计,该设计由多晶硅肋形质量,弹簧,高纵横比平面内感测电极和板型平面外感测电极组成。这种单质量加速度传感器设计具有三个优点,可以提高灵敏度:(1)具有差分电容感应功能的大面积平板型面外间隙闭合感应电极; (2)大面积高纵横比平面内缝隙闭合感测电极; (3)考虑了用于3轴感应的电气布线,(4)厚的肋筋显着增加了质量检测能力。单质量质量3轴加速度计是使用众所周知的两种多晶硅和沟槽填充工艺实现的。测量(0.1G〜3G)表明,蚀刻方向的灵敏度(非线性)为X轴:4.31mV / G(2.72%),Y轴:4.30mV / G(2.57%)和Z轴: 3.48mV / G(2.91%)。

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