Comparison of temperature distribution in FinFETs and GAAFETs based on Dual-Phase-Lag heat transfer model

摘要

In this paper the comparison of the temperature distribution in nanosized FinFET and Gate-All-Around FET (GAAFET) structures is presented. Two different heat transfer models are taken into considerations. The first one is the classical Fourier-Kirchhoff model, while the second one is called the Dual-Phase-Lag model. The thermal analyses include the comparison of the transient and steady-state temperatures inside the FinFET and GAAFET channels. In order to make the analysis more convenient, the normalization of the temperature values have been introduced. All thermal parameter values have been taken from the specialist literature.