首页> 外文会议>IEEE Annual Wireless and Microwave Technology Conference >A 4.32amp;#x007E;8.64-GHz receiver front-end with variable gain amplifier and I/Q mixer for 60-GHz heterodyne system in 65nm CMOS technology
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A 4.32amp;#x007E;8.64-GHz receiver front-end with variable gain amplifier and I/Q mixer for 60-GHz heterodyne system in 65nm CMOS technology

机译:4.32~ 8.64-GHz接收器前端,可变增益放大器和65nm CMOS技术的60-GHz外差系统的I / Q混频器

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In this paper, a receiver front-end which contains variable gain amplifier (VGA) and Gilbert-cell-based I/Q mixer for 60-GHz heterodyne system in 65-nm CMOS technology is presented. The chip size is 0.91 × 1.515 mm2including all the testing pads and dummy metals. The operation frequency of the proposed receiver front-end is from 4.32 GHz to 8.64 GHz. At a 1.0-V supply voltage, this front-end demonstrates the gain-control capability at linear region from 2.5 dB to 12.5 dB by adjusting the control voltage of the attenuator in VGA. The measured Psat is −11.7 dBm and it occurs at 2.5-dBm LO drive power where as RF frequency is at 7.48 GHz. The measured LO-to-IF and RF-to-IF isolation are better than 30 dB and 25 dB, respectively.
机译:本文介绍了在65-NM CMOS技术中包含可变增益放大器(VGA)和基于Gilbert-Cell的I / Q混频器的接收器前端,用于65-NM CMOS技术中的60GHz外差系统。芯片尺寸为0.91×1.515 mm2,包括所有测试垫和伪金属。所提出的接收器前端的操作频率为4.32GHz至8.64 GHz。在1.0V电源电压下,通过调节VGA中的衰减器的控制电压,该前端通过调整衰减器的控制电压来显示从2.5 dB到12.5 dB的线性区域的增益控制能力。测量的PSAT为-11.7 dBm,它发生在2.5-dBm LO驱动电源,因为RF频率为7.48GHz。测量的LO-IF和RF-to-IF隔离分别优于30dB和25 dB。

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