Heat dissipation mechanisms in resistive switching devices

摘要

The local temperature plays a key role in resistive switching devices. We have previously presented a method to experimentally evaluate the filament temperature using metal-insulator-semiconductor bipolar transistor structure. In light of the experimental results, we discuss here the various possible heat dissipation mechanisms, and compare thermal simulations to the measured temperatures. The simulations are consistent with our experimental data for a filament tip diameter of ∼1nm.