Structure-determined thermoelectric properties of Bi2Se3 thin films deposited by vapour-solid technique

摘要

In this work, a simple catalyst-free vapour-solid deposition method is applied for controlled obtaining of two types (planar and disordered) continuous Bi₂Se₃ nanostructured thin films on different (fused quartz/glass, mica, graphene) substrates. Performed for the deposited thin films transport and thermoelectric characterization (type, concentration and mobility of the main charge carriers, Seebeck coefficient and power factor) showed that proposed deposition method allows to fabricate “low-doped” Bi₂Se₃ thin films with power factor comparable and even higher than reported for the Bi₂Se₃ thin films fabricated by molecular beam epitaxy technique.