2D transition metal dichalcogenides nanosheets as gate modulated cold electron emitters

摘要

We report a detailed investigation of the field emission properties of transition metal dichalcogenides, namely MoS2 and WSe2, taking advantage of an experimental setup realized inside a scanning electron microscope equipped with nano-manipulated probe-tips, used for positioning a tip-shaped anode at a nanometric distance from the emitting surface. For n-type WSe2 monolayer on Si/SiO2 substrate, we show that electrons can be extracted also from the flat part of the flake with a current intensity up to few nanoamperes. More interestingly, we demonstrate that the field emission current can be modulated by the back-gate voltage that controls the n-type doping of the WSe2 monolayer. Similarly, we demonstrate that monolayer MoS2 flakes are suitable for gate-controlled field emission devices, opening the way to the development of new field emission transistors based on ultrathin materials.