FAMe: A novel OTP NV memory cell based on a fuse-antifuse series arrangement

摘要

Non-Volatile One-Time-Programmable (NV-OTP) cells are typically based on either an anti-fuse (AF) or a fuse (F) structure but rarely on a combination of both types interacting as a single circuit during programming and detection. This work introduces such a cell named FAMe for Fuse Antifuse Memory. FAMe bit cell is in essence an “OTP-inverter”, where a metal fuse and a 3-terminal Gate-Grounded isolated-NMOS antifuse are connected in series across a Power rail. High detection margins and area efficiency, lower power consumption and CMOS scalability makes it attractive for applications requiring up to 500 bit per die.