Anti-resonance peak frequency control by variable on-die capacitance

摘要

Power integrity design has been becoming important in the advanced CMOS digital systems, because power supply noise induces logic instability and electromagnetic radiation. Especially, anti-resonance peaks in power distribution network (PDN) due to the chip-package interaction induce the unwanted power supply fluctuation, and result in large electromagnetic radiation. In this paper, power supply noises and total impedances of power distribution network (PDN) for the variable structure of on-die capacitances have been examined. In addition, power supply noise and total PDN impedance have been examined by changing the number of power supply terminals. As a result, it has been proved that anti-resonance peaks could be controlled by on-die capacitance and the number of power supply terminals. Simulated anti-resonance peak frequencies were well correlated with the peak frequency spectra of measured power supply noise.