Smart power: From problem statement to system solution

摘要

This paper demonstrates the design of a high power, high efficiency inverter based on SiC (Silicon Carbide) JFET (Junction Field Effect Transistor) switches. It starts with a problem statement, i.e. which requirements are to be fulfilled, discusses design solutions, and ends with some measurements of the complete system. The final design is able to handle more than 1000V, currents of more than 30A and achieves a peak efficiency of more than 99% in a buck configuration [1].