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Monte Carlo simulation of temperature and confinement dependent spin transport in germanium nanowire

机译:蒙特卡洛仿真米兰纳米线温度和限制依赖旋转运输

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In this paper spin polarized transport in Ge nanowires is studied by employing semiclassical Monte Carlo approach. Monte Carlo [2] approach is used since it is able to update spin evolution dynamically in step with the momentum evolution due to electron transport. Spin dephasing in Ge nanowire is caused by D'yakonov-Perel' relaxation[3,4] due to structural inversion asymmetry (Rashba spin-orbit coupling). Spin flip due to Elliott-Yafet[3] is also taken into account in the simulation, Spin relaxation is investigated in germanium nanowire with varying temperature and varying confinement. Electrons are injected polarized in z direction. The wire cross section is varied between 2×2 nm2 and 10×10 nm2.
机译:在本文中,通过采用半半熟蒙特卡罗方法,研究了Ge纳米线中的旋偏异。使用蒙特卡罗[2]方法,因为它能够在由于电子传输引起的动量演变中动态地更新旋转演化。由于结构倒置不对称(Rashba旋转轨道耦合),Ge纳米线中的旋转纳米线是由D'Yakonov-Perel'Sourtation [3,4]引起的。由于Elliott-Yafet引起的旋转翻转[3]也考虑到模拟中,在具有不同温度和不同的限制的锗纳米线中研究旋弛弛豫。电子在Z方向上注射偏振。线横截面在2×2nm 2 和10×10nm 2之间变化。

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