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Electron holography and HRTEM study of the magnetic microstructure of L10 FePt epitaxial thin film grown on MgO-substrate

机译:电子全全息和HRTEM在MgO - 衬底生长的L10驻留外延薄膜磁性微观结构的研究

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Perpendicular epitaxial film of L10 FePt, showing the c-axis normal to the film plane, was successfully grown on top of MgO substrate using DC-magnetron co-sputtering technique. The electron holography study showed that a columnar epitaxial film displayed only a weak stray-field signal due to the presence of columnar boundaries. The growth of a continuous (full) epitaxial film however revealed characteristic LTEM images for the perpendicular magnetic domains. The electron hologram indicated the presence of the stray-field of induction originating from the perpendicular magnetizations. The reconstructed phase-image displayed a characteristic contrast-fringes pattern, indicating the presence of perpendicular magnetic domain walls. From the phase-shift measurement, the perpendicular magnetic induction strength was estimated to be about 0.27T, which was low. The low induction strength was because the film was weakly ordered due to a low substrate temperature.
机译:L10阱的垂直外延膜,显示使用DC-Magnetron共溅射技术在MgO衬底的顶部成功生长的C轴。电子全息研究表明,由于存在柱状边界,柱状外延膜仅显示弱杂散场信号。然而,连续(满)外延膜的生长揭示了垂直磁结构域的特征LTEM图像。电子全息图表明存在源自垂直磁化的偏移的杂散场。重建的相位图像显示了特征造影条纹图案,表明存在垂直磁畴壁。从相移测量,垂直磁感应强度估计为约0.27t,即低。低诱导强度是因为由于低衬底温度,薄膜弱排序。

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