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Impact of Substrate Bias Polarity on Performance of Complementary Symmetric Lateral Bipolar on SiGe-OI Inverter

机译:基质偏置极性对SiGe-OI逆变器互补对称横向双极性能的影响

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Results from recent studies in Symmetric Lateral Bipolar Transistor (SLBT) on SOI makes it as one of the most promising candidate for next generation nano electronic device in low power high speed mixed signal circuits. In this paper we carried out a systematic study and discuss the impact of substrate bias polarity on the performance of the SLBT on SiGe-OI in inverter circuit. DC analysis shows that there is slightly lower static current loss (or quiescent leakage),$mathrm{I}_{mathrm{D}mathrm{D}mathrm{Q}}$for inverter with opposite substrate bias polarity. AC analysis shows that there is improvement in delay with application of substrate bias. We observe almost no difference in$mathrm{I}_{mathrm{D}mathrm{D}mathrm{Q}}$but improvement in speed by$sim 0.156ext{ps}$with substrate bias w.r.t inverter with opposite substrate bias polarity.
机译:最近在SOI上的对称横向双极晶体管(SLBT)的研究结果使其成为低功率高速混合信号电路中的下一代纳米电子器件最有希望的候选者之一。在本文中,我们进行了系统研究,并讨论了基板偏置极性对逆变器电路中SiGE-OI上SLBT的性能的影响。 DC分析表明,静态电流损耗(或静止泄漏)略低, $ mathrm {i} _ { mathrm {d} mathrm {d} mathrm {q}} $ 对于具有相反基板偏置极性的逆变器。 AC分析表明,衬底偏压的延迟有所改善。我们观察几乎没有区别 $ mathrm {i} _ { mathrm {d} mathrm {d} mathrm {q}} $ 但速度的提高 $ sim 0.156 text { ps} $ 具有基板偏置W.T.T逆变器,具有相对的基板偏置极性。

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