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Mechanisms and regularities of the vacuum arc macroparticles behavior near and on a substrate, immersed in plasma

机译:真空弧形弧形行为的机制和规律靠近和在基材上的行为,浸入等离子体中

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It was found that the negative repetitive pulsed biasing of a substrate with respect to the adjacent plasma significantly reduce the MPs content on surface. The decrease of MPs on the negative potential substrate surface is caused by several different physical mechanisms. Up to 10% of macroparticles (MPs) can be repulsed from the plasma-substrate voltage drop after being negatively charged in plasma. The MPs surface density on substrate can be significantly reduced after MPs interaction with negatively biased metal surface. This physical mechanism of negatively charged MPs electrostatic repulsion disappears when tungsten grid is used to create a sheath near the substrate surface. Reduction of MPs surface density almost by half takes a place due to ion sputtering. The decrease of MPs surface density by factor of 12 was achieved after the treatment of substrate for 2 min.
机译:发现基板相对于相邻等离子体的负重复脉冲偏置显着降低了表面上的MPS含量。负势底物表面上的MP的降低是由几种不同的物理机制引起的。在等离子体中负电时,可以从等离子体衬底电压下降中击退高达10%的宏观颗粒(MPS)。在与负偏置金属表面的MPS相互作用后,可以显着降低基板上的MPS表面密度。当使用钨栅格在基板表面附近产生护套时,带负电的MPS静电排斥的这种物理机制消失。降低MPS表面密度几乎逐半取得由于离子溅射而占地面积。在将基材处理2分钟后,实现了MPS表面密度的降低。

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