首页> 外文期刊>Applied Surface Science >Reprint of: Physical mechanisms of macroparticles number density decreasing on a substrate immersed in vacuum arc plasma at negative high-frequency short-pulsed biasing
【24h】

Reprint of: Physical mechanisms of macroparticles number density decreasing on a substrate immersed in vacuum arc plasma at negative high-frequency short-pulsed biasing

机译:转载:在负高频短脉冲偏压下,沉浸在真空电弧等离子体中的基板上,宏观粒子数密度降低的物理机制

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

The objective of this investigation was to study the physical mechanisms of macroparticles (MPs) number density decreasing on a substrate immersed in a vacuum arc plasma. It was found that negative repetitively pulsed biasing of the substrate significantly reduced the MPs content on surface. Several different physical mechanisms for the MPs decreasing have been identified. It was established that up to 10% of the MPs are repelled by the sheath electric field. Reduction of MPs density by almost 20% is attributable to ion sputtering after 2 min of processing. It was found that enhanced ion sputtering, MPs evaporation on substrate surface, and even evaporation of MPs in a sheath, can take place depending on the cathode material and the irradiation parameters.
机译:这项研究的目的是研究浸入真空电弧等离子体中的基板上大颗粒(MPs)数密度降低的物理机制。发现基板的负的重复脉冲偏压显着降低了表面上的MP含量。已经确定了MP降低的几种不同物理机制。已经确定,鞘电场可排斥多达10%的MP。 MPs密度降低近20%归因于处理2分钟后的离子溅射。已经发现,取决于阴极材料和照射参数,可以发生增强的离子溅射,基板表面上的MP蒸发,甚至鞘中的MP蒸发。

著录项

  • 来源
    《Applied Surface Science》 |2014年第15期|115-119|共5页
  • 作者单位

    National Research Tomsk Polytechnic University, 634050, Lenina 2, bdg. 4, Tomsk, Russia;

    National Research Tomsk Polytechnic University, 634050, Lenina 2, bdg. 4, Tomsk, Russia;

    National Research Tomsk Polytechnic University, 634050, Lenina 2, bdg. 4, Tomsk, Russia;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号