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Bending and vibration of monolayer MoS2 beams by molecular dynamics simulations

机译:分子动力学模拟单层MOS2梁的弯曲与振动

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Molecular dynamics simulations based on reactive empirical bond-order potentials were conducted to investigate the bending and vibration of defect-free and defective monolayer MoS2. The effects of constrained boundary conditions and single sulfur point vacancies were concerned. Three types of boundary conditions were discussed in our work, including the simply supported boundary, the pinned-pinned boundary, and the clamped-clamped boundary. For the simply supported beam, typical linear and nonlinear elasticity responses to the lateral loading were observed, distinct from the other beams. The lower concentrations of VS defect were found to have insignificant effects on the bending and vibrational responses of the defective MoS2, despite a slight frequency drift appeared. However, higher order resonant frequencies were arisen in some monolayer MoS2 with randomly distributed VS defects.
机译:进行了基于反应性经验键核算电位的分子动力学模拟,以研究无缺陷和缺陷的单层MOS2的弯曲和振动。受限制边界条件和单硫点空缺的影响。我们的工作中讨论了三种类型的边界条件,包括简单地支持的边界,固定钉扎边界和夹紧夹紧边界。对于简单地支撑的光束,观察到对横向负载的典型线性和非线性弹性响应,与其他梁不同。尽管出现略微频率漂移,但发现对缺陷MOS2的弯曲和振动响应的较低浓度对缺陷MOS2的弯曲和振动响应具有微不足道的影响。然而,在一些单层MOS2中出现高阶谐振频率,随机分布的VS缺陷。

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