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Bending and vibration of monolayer MoS2 beams by molecular dynamics simulations

机译:MoS2单层梁的弯曲和振动的分子动力学模拟

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Molecular dynamics simulations based on reactive empirical bond-order potentials were conducted to investigate the bending and vibration of defect-free and defective monolayer MoS2. The effects of constrained boundary conditions and single sulfur point vacancies were concerned. Three types of boundary conditions were discussed in our work, including the simply supported boundary, the pinned-pinned boundary, and the clamped-clamped boundary. For the simply supported beam, typical linear and nonlinear elasticity responses to the lateral loading were observed, distinct from the other beams. The lower concentrations of VS defect were found to have insignificant effects on the bending and vibrational responses of the defective MoS2, despite a slight frequency drift appeared. However, higher order resonant frequencies were arisen in some monolayer MoS2 with randomly distributed VS defects.
机译:进行了基于反应性经验键序势的分子动力学模拟,以研究无缺陷和有缺陷的单层MoS2的弯曲和振动。考虑了约束边界条件和单硫点空位的影响。在我们的工作中,讨论了三种类型的边界条件,包括简单支撑边界,固定-固定边界和夹紧-夹紧边界。对于简单支撑的梁,观察到典型的线性和非线性弹性响应横向载荷,与其他梁不同。发现较低的VS缺陷浓度对有缺陷的MoS2的弯曲和振动响应影响不大,尽管出现了轻微的频率漂移。但是,在某些具有随机分布的VS缺陷的单层MoS2中,出现了更高阶的谐振频率。

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