Dark Current Characterization and Simulation for In_(0.78)Ga_(0.22)As PIN Photodetectors

摘要

The dark current characterization of In_xGa_(1-x)As with x=0.78 have been investigated. Meanwhile, the dark current related deep level trap with E_t= 0.26 eV is detected by using Deep-Level Transient Spectroscopy (DLTS). 2D simulation of dark current shows that SRH recombination, trap-assisted tunneling and band-to-band tunneling currents are the main contributors to the dark current of In_xGa_(1-x)As( x=0.78) detector. To further improve the dark current characteristic, we need to improve the material growth.