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Surface and electromechanical properties of polydimethylsiloxane films prepared by modified molding technique

机译:通过改性模塑技术制备的聚二甲基硅氧烷膜的表面和机电性能

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In this paper, we report surface and electromechanical properties of polydimethylsiloxane (PDMS) films prepared by a modified molding technique. The film with thickness = 4 μm was deposited on oxidized silicon wafer by the modified molding technique and corresponding elastic modulus of the bulk PDMS materials is equal to 36 kPa. Surface morphology of the film was examined by optical interferometer and Scanning Electron Microscope (SEM). Its roughness is ~ 10 nm and wave-liked structures were locally observed on the film surface. In order to investigate electromechanical performance of the film, sandwich structured multilayer films Au (patterned electrodes, 150 nm) /PDMS (4 μm) /Au (top un-patterned electrode, 50 nm) were deposited on the oxidized silicon wafer. The displacement ratios of the PDMS film parallel to electric fields were characterized from 0 V/μm to 52.5 V/μm and maximum value of the displacement ratio reaches ~ 5.0 %. Meanwhile, the rising and falling response time of the PDMS films are reported as a function of applied electric fields. Since the good light reflection of top gold electrode and displacement ratio of the sandwich-structured films, the multilayer films device might be a proper candidate for the application of spatial light modulator.
机译:在本文中,我们报道了表面和聚二甲基硅氧烷的机电性质(PDMS)膜制备通过修改的模制技术。与厚度=4μm的薄膜是由改性模制技术和相应的散装PDMS材料的弹性模量等于36千帕沉积氧化的硅晶片上。该膜的表面形态用光学干涉仪和扫描电子显微镜(SEM)检查。其粗糙度为〜10nm且波喜欢结构进行了局部的薄膜表面上观察到。为了研究膜的机电性能,夹心结构的多层膜的Au(图案化电极,150纳米)/ PDMS(4微米)/金(顶部未图案电极,为50nm)沉积氧化硅晶片上。平行于电场的PDMS膜的位移的比率从0 V /微米表征52.5 V /微米和位移比达到〜5.0%的最大值。同时,PDMS膜的上升和下降响应时间报告为施加电场的函数。由于顶部金电极和夹心结构的膜的位移比的良好的光反射,所述多层膜装置可能是空间光调制器的应用的适当候选者。

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