Power Double Gate MOSFET Modeling Based on Adaptive Neuro-Fuzzy Inference System for Nano Scale Circuit Simulation

摘要

During the last decades the electronic technology has faced drastic changes mainly to reduce the circuit as small as possible and hence came the MOS technology. This basic need arised because as the conventional silicon metal-oxide semiconductor field effect transistor (MOSFET) approaches its scaling limit, quantum mechanical effects are expected to become more and more important. The voltage applied to gate terminal determines the current flowing through the channel. This ANFIS model reduces the computational time while keeping the accuracy of physics based models, like Non Equilibrium Greenâs Function (NEGF) formalism. Finally, we import the ANFIS model into the circuit simulator software as a sub circuit. The result shows that the compact model based on ANFIS is an efficient tool for the simulation of nanoscale circuits.