Synthesis and Analysis of STT-RAM Switching Characteristics

摘要

Spin transfer torque random access memory is a latest cutting edge memory technology which is suitable to be considered for universal memory. In Spin transfer torque random access memory, the magnetic state of magnetic tunneling junction is switched by passing the spin-polarized current through the junction. We have synthesized the HSpice model of STT-RAM to analyze the parallel and anti-parallel switching with change in switching resistance across the fixed and free layer. In this paper, performance comparison between 1-bit STT-RAM cell and Dynamic Random Access Memory (DRAM) is presented. The STT-RAM having high speed, low power consumption, high endurance, zero standby power, high reading and writing speed. In case of STT-RAM storing of bit '1' causes the MTJ resistance to increase up to a specific value and the value of MTJ resistance is 1.4KΩ and current is 700mA. In storing '0' the MTJ resistance is low and value is 0.7KΩ. MTJ current value is -700mA. The leakage power is reduced by 60% in case of STT-RAM when compared to DRAM.