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Design of an ultrawide band low noise microstrip amplifier using 3D sonnet- based SVRM with particle swarm optimization for space applications

机译:使用基于3D十四行诗的SVRM和粒子群优化技术的超宽带低噪声微带放大器设计,用于太空应用

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In this work, a determinististic, efficient design methodology is put forward to design a wide-band, low-noise microstrip amplifier, where the microstrip widths, lengths {⃗W,⃗ℓ} of the input/ output matching networks are obtained accurately and fast for a substrate {εr, h, tanʴ} using the cost-effective 3D EM- based Support Vector Regression Machine (SVRM) microstrip model provided that ensuring the stable source ZS(ω) and load ZL(ω) terminations for the compatible {Noise F(ω) ≥ Fmin(ω), Input VSWR Vi(ω) ≥1, Gain GTmin(ω)>GT(ω)≥GTmax(ω), Bandwidth B} quadrates of the employed transistor. The 3D EM- based SVRM microstrip model provides the accurate and fast characterization of the equivalent transmission line in terms of the characteristic impedance Z0 and the dielectric constant eeff within the continuous domain of {0.1mm ≤ W ≤ 4.6 mm, 2 ≤ εr ≤ 10, 0.1mm ≤ h ≤ 2.2mm, 2GHz ≤ f ≤ 14GHz} in an efficient manner. In the modeling process, the substantial reduction (up to %64) is obtained utilizing sparseness of SVRM in the number of expensive fine discretization training data with the negligible loss in the predictive accuracy using the quasi-TEM microstrip synthesis formulas as the coarse model that allow to identify the regions of the design space requiring denser sampling. Moreover, the multi-objective amplifier design problem is reduced into the two single-objective design problems of the input(IM)/ output (OM)matching networks to provide the source ZS(ω) and load ZL(ω) terminations to the transistor, respectively. Finally the design methodology is applied to the design of typ- cal wideband low-noise amplifiers of the transistor NE3512S02 within 3GHz and 8GHz using T-, П- L types of microstrip matching circuits satisfying the maximum gain provided the available minimum noise and a permitted amount of input mismatching at each operation frequency. In the design optimization of the IM/OM networks, a Memetic Algorithm (MA) in which a simple local optimizer called Nelder-Mead (NM) algorithm is used along with the global optimizer Particle Swarm (PSO) algorithm is used. Furthermore, typical T-T designed amplifier is validated using the Circuit Simulator AWR and 3 D EM Simulator SONNET.
机译:在这项工作中,提出了一种确定性,有效的设计方法来设计宽带,低噪声微带放大器,其中,可以准确,快速地获得输入/输出匹配网络的微带宽度,长度{⃗W,⃗ℓ},用于使用具有成本效益的基于3D EM的支持向量回归机(SVRM)微带模型的衬底{εr,h,tanʴ},前提是要确保稳定的源Z S (ω)和负载Z L (ω)终端,用于兼容的{噪声F(ω)≥F min (ω),输入VSWR Vi(ω)≥1,增益G Tmin (ω)> G T (ω)≥G Tmax (ω),带宽B}为所用晶体管的四倍。基于3D EM的SVRM微带线模型可以根据{0.1mm≤W≤的连续域内的特征阻抗Z 0 和介电常数eeff准确,快速地表征等效传输线4.6 mm,2≤ε r ≤10,0.1mm≤h≤2.2mm,2GHz≤f≤14GHz}。在建模过程中,使用准TEM微带合成公式作为粗模型,利用昂贵的精细离散化训练数据中SVRM的稀疏性和预测精度的损失可忽略不计,可实现大幅减少(最多64%)。可以识别需要更密集采样的设计空间区域。此外,将多目标放大器设计问题简化为输入(IM)/输出(OM)匹配网络的两个单目标设计问题,以提供源Z S (ω)和负载Z L (ω)端接至晶体管。最后,该设计方法应用于TNE,П-L型微带匹配电路在3GHz和8GHz范围内的晶体管NE3512S02的典型宽带低噪声放大器的设计。每个工作频率下的输入失配量。在IM / OM网络的设计优化中,使用了Memetic算法(MA),其中使用了一个称为Nelder-Mead(NM)算法的简单本地优化器以及全局优化器的粒子群算法(PSO)。此外,使用电路仿真器AWR和3D EM仿真器SONNET对典型的T-T设计的放大器进行了验证。

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