Simulation and optimization of lightly-doped ultra-thin Triple Metal Double Gate (TM-DG) MOSFET with high-K dielectric for diminished short channel effects

摘要

In this paper, we have proposed Lightly-Doped Ultra-Thin Triple Metal Double Gate (TM-DG) MOSFET with High-K Dielectric in the gate oxide to reduce the Short Channel Effects (SCEs). The above device has been optimized with TCAD simulations and it has been found that the TMDG MOSFETs offers better transconductance, subthreshold swing, ON and OFF state currents in nanometer regime than Single Metal DG MOSFETs.