This paper evaluates the commercially available semiconductor switch technologies for automotive applications. For this purpose, conventional Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) is compared with wide bandgap Gallium Nitride (GaN) and Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Various design aspects of commercially available wide bandgap switches are introduced. Afterwards, experimental efficiency measurements for SRM drive systems using different semiconductor technologies are performed. Methods to improve performance of the automotive drive system are introduced.
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